Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric

Abstract

Structural and electrical characteristics of the metal–insulator–semiconductor (MIS) structures of Al/Al2O3/Si containing Ge nanoclusters are experimentally demonstrated. Secondary ion mass spectroscopy results indicate the out-diffusion of Ge after annealing at 800 °C in N2 ambient for 30 min. An increment of leakage current is observed due to the out-diffusion of Ge. Capacitance–voltage studies indicate that annealing can effectively passivate the negatively charged trapping centers. Memory effect of the Ge nanoclusters is verified by the hysteresis in the C–V curves in the annealed sample.