H passivation of shallow acceptors in Si studied by use of the perturbed-γγ-angular-correlation technique

Abstract

With the radioactive probe atom $^{111}\mathrm{In}$ as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-\ensuremath{\gamma}\ensuremath{\gamma}-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.