Japanese Journal of Applied Physics · 1985 · 21 citations · 4 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsOptoelectronicsElectronic Band StructureOptical Properties Of SemiconductorsOptical Properties Of SolidsQuantum ConfinementSemiconductor HeterostructuresSemiconductor PhysicsConduction BandOptical AbsorptionOptical Absorption SpectraOptical Band GapOptical PropertiesSemiconductor Band Gap DeterminationSuperlattice MaterialsSuperlattices
Optical-absorption-edge shifts due to free carrier (Burstein-Moss effect) of PbTe-Pb 1- x Sn x Te ( x =0.22) superlattices (SLs) were measured at 77 K to determine the band offset of the heterojunction. For the n -type SL, the shift was very small owing to the electron confinement into PbTe wider gap layers resulting from a type-I' band structure. On the other hand, a large shift was observed for the p -type SL owing to the electron confinement into Pb 1- x Sn x Te narrower gap layers. Analyzing the optical absorption properties, conduction band edge of the Pb 1- x Sn x Te was estimated to be 60 meV higher than that of PbTe.
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