Japanese Journal of Applied Physics · 2007 · 17 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsThin FilmsChemical Vapor DepositionOptical Properties Of SemiconductorsOptical Properties Of SolidsOptical Thin FilmsRefractive IndexThin Film Optical PropertiesBand GapBand Gap EnergyFilm Growth MechanismsMetalorganic Chemical Vapor DepositionOptical PropertiesOptical Properties Of Low-dimensional SolidsPlasma-enhanced Chemical Vapor DepositionTemperature-dependent Growth
Zn1-xCdxO films were grown on a-plane (1120) sapphires by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The growth temperature, the group-II flow ratio R, and RF power are important parameters for the growth of Zn1-xCdxO films by RPE-MOCVD. R is defined as the molar function of [DMCd/(DEZn+DMCd)]. We discuss typical growth features associated with RPE-MOCVD and the refractive indices of wurtzite-type films. The band gap energy of Zn1-xCdxO grown at 350 °C can be controlled from 3.3 down to 1.8 eV. The refractive index is measured by ellipsometry at 1.96 eV and is found to vary from 2.07 to 2.78.
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Zn 1 − x Cd x O systems with visible band gaps
Junji Ishihara, Atsushi Nakamura, Satoshi Shigemori et al. · Applied Physics Letters · 2006 · 108 citations
Natural Sciences, Materials Engineering, Materials Science +17