Applied Physics Letters · 2003 · 182 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsDopingOptical Properties Of SemiconductorsOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsBand GapBand Gap EngineeringHigh-resolution X-ray DiffractionLattice MismatchLattice Mismatch EffectsMetalorganic Vapor Phase EpitaxyOptical PropertiesZinc Oxides
The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1−xCdxO allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor-phase epitaxy. A narrowing of the fundamental band gap of up to 300 meV has been observed, while introducing a lattice mismatch of only 0.5% with respect to binary ZnO. Photoluminescence, high-resolution x-ray diffraction, and spatially resolved cathodoluminescence measurements revealed a lateral distribution of two different cadmium concentrations within the Zn1−xCdxO layers.
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Optically pumped lasing of ZnO at room temperature
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1997 · 2.2K citations
The exciton spectrum of zinc oxide
D. G. Thomas · Journal of Physics and Chemistry of Solids · 1960 · 793 citations