In 0.34 Al 0.66 As 0.85 Sb 0.15 /δ(n + )- InP heterostructure field-effect transistors

Abstract

A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φB>0.73 eV), and large conduction-band discontinuity (ΔEc>0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved.