Electronics Letters · 2007 · 20 citations · 10 references
EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor DevicesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesQuantum DotsQuantum OptoelectronicsSemiconductor LasersCurrentsMultilayer StacksQuantum Dot Lasers
Dynamic measurements of the Henry factor αH of InAs/GaAs Fabry-Pérot lasers are compared for 3-, 5- and 10-QD layers. While αH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.
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InGaAs-GaAs quantum-dot lasers
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Mitsuru Sugawara, Nobuaki Hatori, M. Ishida et al. · Journal of Physics D Applied Physics · 2005 · 231 citations