Band-gap modified Al-doped Zn1−xMgxO transparent conducting films deposited by pulsed laser deposition

Abstract

Al-doped Zn1−xMgxO films have been deposited on glass substrates at a substrate temperature of 200°C by a pulsed laser deposition system. A resistivity of 3×10−4Ωcm was obtained at x=0.06. Film resistivity was found to increase with further increases in Mg composition. The maximum band gap of films with a resistivity ρ⩽1×10−3Ωcm was found to be 3.97eV, demonstrating band-gap engineering possibilities in the range of Eg=3.5–3.97eV with a resistivity ρ⩽1×10−3Ωcm. The average transmittance of the films was higher than 90% in the wavelength region λ=400–800nm, a range suitable for transparent conducting film applications.