Investigation of the holographic storage capacity of paraelectric K_1?xLixTa_1?yNbyO_3:Cu,V

Abstract

High holographic storage capacity of paraelectric K(1-x)Lix Ta(1-y) Nby O(3):Cu , V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8 degrees , yield an M/# of 20.