Epitaxial relationship between wurtzite GaN and β-Ga2O3

Abstract

The epitaxial relationship between wurtzite GaN and monoclinic β-Ga2O3 is studied by transmission electron microscopy. GaN is grown on β-Ga2O3 by molecular beam epitaxy without any low-temperature buffer layer, obtaining c plane GaN on a plane β-Ga2O3. The effect of the surface nitridation, which is necessary for the epitaxial growth, is analyzed at the atomic level. The lattice mismatch has a minimum of 2.6% for the in-plane epitaxial relationship ⟨011⟩Ga2O3‖⟨101¯0⟩GaN.