Applied Physics Letters · 2006 · 173 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsLight-emitting DiodesLuminescent MaterialsOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresDefect DensityDislocation DensityElectroluminescenceLight-emitting DevicesMetal-organic Chemical Vapor DepositionPhotoluminescencePulsed Laser DepositionSemiconductor Light-emitting Materials
n - Zn O ∕ p - Ga N : Mg heterojunction light emitting diode (LED) mesas were fabricated on c-Al2O3 substrates using pulsed laser deposition for the ZnO and metal organic chemical vapor deposition for the GaN:Mg. High crystal quality and good surface morphology were confirmed by x-ray diffraction and scanning electron microscopy. Room temperature (RT) photoluminescence (PL) showed an intense main peak at 375nm and a negligibly low green emission indicative of a near band edge excitonic emission from a ZnO layer with low dislocation/defect density. The LEDs showed I-V characteristics confirming a rectifying diode behavior and a RT electroluminescence (EL) peaked at about 375nm. A good correlation between the wavelength maxima for the EL and PL suggests that recombination occurs in the ZnO layer and that it may be excitonic in origin. This also indicates that there is significant hole injection from the GaN:Mg into the ZnO.
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High temperature excitonic stimulated emission from ZnO epitaxial layers
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1998 · 783 citations
P‐type doping and devices based on ZnO
D. C. Look, B. Claflin · physica status solidi (b) · 2004 · 525 citations