Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements

Abstract

Al /u :GaAs /n :Ga 0.52 In 0.48 P inverted-structure (GaAs on top) Schottky diodes on n+ GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6–8×1011/cm−2 at the GaAs/Ga0.52In0.48P interface, which is opposite in sign to the interface charge at the normal structure of the Ga0.52In0.48P/GaAs heterojunction reported previously.