Millimeter-wave power amplifier module using redistribution layer technology

Abstract

This paper presents a 77-GHz band high-power CMOS amplifier module. In an effort to integrate MMIC with low-loss passive circuits, multi-layered redistribution layer (RDL) technology has been installed. Passive circuits made using RDL technology and 65-nm CMOS circuits are enabling breakthrough approaches for millimeter wave applications. Low-loss passive circuits using RDL technology was fabricated. Moreover, we developed an amplifier module combining four identical CMOS power amplifiers with RDL Wilkinson power combiner to increase the output power. The saturation power of the amplifier module exhibits 15 dBm, which is 6 dB higher than that of the single PA.