On the Kinetics of the Thermal Oxidation of Silicon: IV . The Two‐Layer Film Approximation

Abstract

An analysis has been made of the oxidation rate for a film that contains an interface blocking layer with different transport properties than the bulk oxide. The results reproduce the Deal‐Grove (11) formalism, satisfy the Doremus requirement (12), the Tiller requirement (2), the Taft‐Cordes results (6), and the van der Meulen experiment (13). The temperature and oxygen pressure results for thin oxides may be quantitatively matched by the two‐layer film model. The present analysis restricts itself to neutral species.