1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density

Abstract

The quaternary GaInNAs barrier layer was used to improve the performance of 1.3 µm GaInNAs single quantum well lasers grown by MBE. A record low threshold current density of 178 A/cm2 and a record low transparent current density of 63 A/cm2 were achieved by a ridge waveguide laser with emission at 1336 nm.