Automatic Generation of Compact Electro-Thermal Models for Semiconductor Devices

Abstract

Introduction modeling ofelectro-thWOzs processes becomes increasingly important during semiconductor device development. For example, with th decreasing size and growing complexity of micro-electronic and micro-electro-mech)D) (MEMS) systems,th power dissipation of integrated circuitshr become a critical concern. Due to th very hry clock frequencies,th power consumption of a modern microprocessor can exceed 50W.Th th)O5N influence uponth device caused byeach transistor'sself-h'SzxO and th th5NSz interactionwith tighac placedneigh)Dx(s devices cannot be neglected, because excessive temperatures may causeth malfunction of th device or even destroy it.ThzS5W)s' it is necessary to develop aelectro-thzsh model whel computes th dependence between power dissipation and temperature distribution over th device. Moreover,such hch transfer analysis needs to be done quickly in response to every design alteration.Th model must also provide good accuracy in order to return precise temperature value