Applied Physics Letters · 2008 · 67 citations · 18 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthMicrostructure AnalysisSemiconductor Crystal GrowthStacking FaultsThin Film AnnealingThin-film MaterialsAnnealing Temperature EffectsCritical ThicknessEpitaxial Film MorphologyEpitaxial Thin-film GrowthFilm Growth MechanismsFilm ThicknessManganese Cluster StructureThin-film Growth Mechanisms
Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72nm and c=1.3nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.
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Making Nonmagnetic Semiconductors Ferromagnetic
Hideo Ohno · Science · 1998 · 4.8K citations
A Group-IV Ferromagnetic Semiconductor: Mn <sub> <i>x</i> </sub> Ge <sub> 1− <i>x</i> </sub>
Y. D. Park, Aubrey T. Hanbicki, Steven C. Erwin et al. · Science · 2002 · 1.6K citations
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Origin and control of high-temperature ferromagnetism in semiconductors
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