Digitally-controlled DLL and I/O circuits for 500 Mb/s/pin ×16 DDR SDRAM

Jung-Bae Lee, Kyu Hyun Kim, Changsik Yoo, Sang-Bo Lee, One-Gyun Na, Chanyong Lee, Hoyoung Song, Jongsoo Lee, Zi-Hyoun Lee, Ki-Woong Yeom,

2002 · 24 citations · 3 references

Concepts

Abstract

DLL and improved I/O circuits are for 500 Mb/s/pin DDR SDRAM. This digitally-controlled DLL has inherent duty cycle correction capability, enabling fast re-locking upon standby-mode exit. Data input circuits, such as internal delay control and digital sense amplifier, reduce setup/hold window to 0.3 ns. The output data driver has 62% decreased pattern-dependent skew.

References

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