Growth and characterization of 10-nm-thick <i>c</i>-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate

Abstract

A 10-nm-thick PbZr0.25Ti0.75O3 thin film is epitaxially grown on a SrRuO3/BaTiO3/ZrO2/Si heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film.