Reverse‐Offset Printing Optimized for Scalable Organic Thin‐Film Transistors with Submicrometer Channel Lengths

Abstract

Printed organic thin-film transistor (TFT) devices with submicrometer (0.6 μm) channel length (L) are fabricated by employing a scalable reverse-offset printing method. The fabricated TFT devices exhibit remarkable performance, with high field-effect mobilities (0.27 cm2 V−1 s−1 for L = 2.4 and 9.0 × 10−3 cm2 V−1 s−1 for L = 0.6 μm) and high on/off current ratios (>105). As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.