RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

Abstract

As scaling down the MOSFET, the f/sub t/ keeps increasing but the minimum noise figure (NF/sub min/) is difficult to scale down due to the increasing gate resistance. In this study, the NF/sub min/ can be continuously reduced to 0.13 /spl mu/m technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NF/sub min/ of only 0.87 dB is measured with 4/spl mu/m finger width and multiple 72 fingers. In addition, high associated gain (22.5dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 /spl mu/m mode MOSFETs using only 6 fingers that is impossible in 0.18/spl mu/m case. We have also predicted the future scaling trend of RF noise beyond 0.13/spl mu/m mode from measured data and well calibrated Fukui's equation.