Time‐resolved near‐field optics: exciton transport in semiconductor nanostructures

Abstract

We present a systematic, temperature-dependent study of excitonic real-space transfer into single GaAs quantum wires using time-resolved low-temperature near-field luminescence spectroscopy. Excitons generated by local short pulse optical excitation in a 250 nm spot undergo diffusive transport over a length of several micrometres and are subsequently trapped into the quantum wire by optical phonon emission. The effect of local energy barriers in the vicinity of the quantum wire on the real-space transfer dynamics is monitored directly by mapping the time-resolved quantum wire luminescence. Experiments at variable temperatures are compared to numerical simulations based on drift-diffusive model calculations, and the spatio-temporal evolution of the two-dimensional exciton distribution within the nanostructure is visualized.