GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion

Abstract

In this paper, the design and performance of class E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> resonant topologies for dc/dc power conversion at UHFs are considered. Combining the use of RF gallium-nitride HEMT devices, both for the inverter and synchronous rectifier, with high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</i> lumped-element terminating networks, peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low-frequency more traditional switched-mode converters, a class E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches. Finally, the potential of such a high frequency of operation in terms of power density is explored, absorbing undesired coil parasitics for the original LC series interconnecting network in a 1-GHz design methodology.