Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

Abstract

A complementary heterostructure insulated gate field effect transistor (c-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1 mu m gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 mu W/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1 kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1 K SRAMs at a power of 650 mW. The 1 K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>