Publication | Closed Access
Thermal design and measurements of IGBT power modules: transient and steady state
22
Citations
7
References
2003
Year
Unknown Venue
EngineeringPower ElectronicsThermal ConductivityIgbt DevicesSteady StateAdvanced Packaging (Semiconductors)Igbt Power ModulesThermal DesignThermal ModelingElectronic PackagingCost ViewpointsMaterials ScienceElectrical EngineeringBias Temperature InstabilityChip AttachmentHeat TransferMicroelectronicsUltra High SpeedPower DeviceApplied PhysicsThermal EngineeringThermal Property
The spatial temperature distributions on IGBT devices in 6-pack power modules have been measured during both transient and steady-states using ultra high speed infrared microscopy. Power modules examined included a commercial 6-pack module and a miniaturized inverter. The modules were constructed using both Al/sub 2/O/sub 3/ and AlN direct bond copper (DBC) substrates and an insulated metal substrate (IMS). The effects of IGBT bonding pad design and layout, bond wire arrangement and module curvature on the temperature distribution were measured and analyzed. Thermal performances of all the modules were characterized by the junction-to-case, case-to-sink and sink-to-ambient thermal resistance. The trade-offs between AlN, Al/sub 2/O/sub 3/, and IMS substrates and the replacement of conventional solder with a conductive adhesive are discussed from thermal, reliability and cost viewpoints.
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