GUNN EFFECT IN <i>n</i>-TYPE InSb

Abstract

In this letter we report the observation of the Gunn effect in n-type InSb at 77°K and atmospheric pressure. This result is surprising, since it was previously thought that the large amount of carrier multiplication at fields below the Gunn threshold would preclude observation of the Gunn effect in InSb and similar materials. Several explanations for the negative differential conductivity underlying the Gunn effect in this case are possible, but the intervalley transfer mechanism is most consistent with the observed negative pressure coefficient of the threshold field.