Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte

Abstract

Indium-zinc-oxide (IZO) electric-double-layer transistors are fabricated on proton conducting chitosan-based biopolymer electrolyte. Due to the extremely strong proton gating originated from proton migration within the chitosan films, good electrical performances are obtained. Characteristic time for the proton gating is estimated to be on the order of several milliseconds. Furthermore, a resistor loaded inverter is built, showing a high-voltage gain of ~9 at a low supply voltage of 1.2 V. The proton-gated IZO transistors may find potential applications in portable electronics and synaptic electronics.