104 and 134 GHz InGaP/InGaAs HBT oscillators

Abstract

In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a phase noise of -72 dBc/Hz at 1 MHz offset. To our knowledge, the 134 GHz oscillator is the highest-frequency fundamental mode oscillator using bipolar device technology ever reported.