InAsP/InGaAsP quantum-well 1.3 µm vertical-cavity surface-emitting lasers

Abstract

1.3 µm vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2 dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity mirrors, respectively. The device with a 5 µm-diameter selectively etched tunnel-junction aperture exhibits submilliampere threshold current as low as 0.54 mA and single-transverse mode emission. Maximum output optical power of 1.9 mW was observed in multimode lasing devices.