Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering

Abstract

The AlGaInN semiconductor system is currently of high interest for applications in blue light emitting devices. AlInN is a prospective material for lattice matched confinement layers. We measure the refractive index as well as the band gap across the entire compositional range of high-quality polycrystalline AlInN samples. Strong band gap bowing is observed.