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Large tunnel magnetoresistance ratio in Fe/O/NaCl/O/Fe
11
Citations
26
References
2015
Year
Magnetic PropertiesEngineeringSpin-charge ConversionSpin SystemsSpintronic MaterialSpin DynamicMagnetic MaterialsSpin PhenomenonMagnetoresistanceMagnetismTunneling MicroscopyQuantum MaterialsAttractive Mtj FeSpin-orbit EffectsElectrical EngineeringSpin-charge-orbit ConversionPhysicsQuantum MagnetismSpintronicsFerromagnetismSpin-orbit TorqueNatural SciencesFirst PrinciplesApplied PhysicsCondensed Matter PhysicsFeo Buffer Layer
Magnetic tunnel junction (MTJ) is an important device element for many practical spintronic systems. In this paper, we propose and theoretically investigate a very attractive MTJ Fe(001)/O/NaCl(001)/O/Fe(001) as a two-terminal transport junction. By density functional theory total energy methods, we establish two viable device models: one with and the other without mirror symmetry across the center plane of the structure. Large tunnel magnetoresistance ratio (TMR) is predicted from first principles, at over 1800% and 3600% depending on the symmetry. Microscopically, a spin filtering effect is responsible for the large TMR. This effect essentially filters out all the minority spin channels (spin-down) from contributing to the tunnelling current. On the other hand, transport of the majority spin channel (spin-up) having Δ1 and Δ5 symmetry is enhanced by the FeO buffer layer in the MTJ.
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