2-D integrated magnetic field sensor in CMOS technology

Abstract

A silicon sensor capable of measuring two components of the magnetic field in the plane of chip is presented. The device is based on lateral magnetotransistor action, has two collector pairs and uses a differential approach for magnetic field sensing. It has linear response to a magnetic field, and it does not show cross-sensitivity. The relative sensitivity per channel is the range of 45%/T.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>