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Study of Excess Silicon at Si3 N 4 / Thermal SiO2 Interface Using EELS and Ellipsometric Measurements
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1999
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EngineeringChemical CompositionChemistrySilicon On InsulatorChemical EngineeringSiliceneSi3 N 4Excess SiliconMaterials ScienceEllipsometric MeasurementsSemiconductor TechnologyOxide ElectronicsSemiconductor MaterialSemiconductor Device FabricationElectrochemistrySilicon DebuggingSurface ScienceApplied PhysicsSono Structure
The chemical composition and structure of the interface in silicon/oxide/nitride/oxide (SONO) structures were studied by using electron energy loss spectroscopy (EELS) and ellipsometric measurements. Both experiments show the existence of excess silicon at the interface, in the form of Si‒Si bonds in the Si‐rich silicon oxynitride. Wet oxidation of the as‐deposited has profound effects on the interfaces in SONO structure. Mechanisms responsible for these observations are proposed based on the chemical reactions during the synthesis of the SONO structure. Particularly, we propose that the Si‒Si bonds are produced by replacing nitrogen with oxygen during the oxidation of . These bonds should be the responsible candidates for the positive charge accumulation in re‐oxidized nitrided oxide at the hot hole injection and ionizing radiation. © 1999 The Electrochemical Society. All rights reserved.