Physical and electrical properties of sputtered Ru₂Si₃/Si structures

Abstract

Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed.