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Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering

DOI

13

Citations

0

References

2013

Year

Kazuya Ishibashi, Motoki Takahara, Jyun Kudo, Isao Tsunoda, Kenichiro Takakura, Toshiyuki Nakashima, M. Shibuya, Katsuya Murakami
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Abstract

Abstract Crystalline quality and optical properties of gallium oxide films grown on SiO 2 substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga 2 O 3 ) film changed in a β ‐Ga 2 O 3 film. Estimated optical energy gap of as‐grown and post annealed films are the same from 4.85 to 4.90 eV. The energy gap for as‐deposited film corresponds to band gap of β ‐Ga 2 O 3. It has a property of β ‐Ga 2 O 3 nevertheless the as‐deposited Ga 2 O 3 films. The integrated absorption coefficient under the energy gap decreases with increasing thickness of Ga 2 O 3 film. These results indicate that crystalline quality of β ‐Ga 2 O 3 film is improved by increment the film thickness. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)