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Large band gap bowing of InxGa1−xN alloys
211
Citations
15
References
1998
Year
Materials ScienceMaterials EngineeringWide-bandgap SemiconductorStrained Inxga1−xn EpilayersEngineeringCrystalline DefectsPhysicsApplied PhysicsCondensed Matter PhysicsAlloy DesignBand GapBand Gap MeasurementsInxga1−xn AlloysAlloy PhaseMicrostructure
Band gap measurements have been performed on strained InxGa1−xN epilayers with x⩽0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. At x=0.125 the calculated bowing parameter is b=3.5 eV, in good agreement with the experimental values.
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