A Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm Node

Abstract

This paper demonstrates, for the first time, that sub-atmospheric chemical vapour deposition (SACVD) oxide is a good candidate for 45-nm node as shallow trench isolation (STI) gap-fill as well as a mobility enhancement technique for both lang100rang and lang110rang channel orientations. Respectively, 11% and 18% drive current enhancement for NMOS and PMOS transistors as well as a 12% ring oscillator speed improvement compared to a conventional high density plasma (HDP) process are reported