2006 · 25 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsTerahertz PhotonicsBandwidthFrequency MultipliersGaas Microwave Integrated CircuitsHigh-frequency ElectronicsMicrowave DevicesPower InputRadio-frequency DevicesTerahertz Semiconductor Devices
We report on the fabrication at the Jet Propulsion Laboratory of a fixed-tuned split-block waveguide balanced frequency tripler working in the 260-340 GHz band. This tripler will be the first stage of a x3x3x3 multiplier chain to 2.7 THz (the last stages of which are being fabricated at JPL) and is therefore optimized for high power operation. The multiplier features six GaAs Schottky planar diodes in a balanced configuration integrated on a GaAs membrane. Special attention was put on splitting the input power as evenly as possible among the diodes in order to ensure that no diode is overdriven. Preliminary RF tests indicate that the multiplier covers the expected bandwidth and that the efficiency is in the range 1.5-7.5 % with 100 mW of input power.
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Imran Mehdi, Erich Schlecht, Goutam Chattopadhyay et al. · 2002 · 28 citations