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Properties of Si[sub x]O[sub y]N[sub z] Films on Si
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1968
Year
Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesSemiconductorsEngineeringOxide ElectronicsSurface ScienceApplied PhysicsOxide SemiconductorsPassivation PropertiesVarious MixturesSemiconductor MaterialOptoelectronic DevicesThin Film Process TechnologyThin FilmsThin Film ProcessingSilicon Nitride
The properties of silicon nitride, oxynitride, and oxide films formed by the pyrolysis of various mixtures of , , and are presented. The variation in physical, optical, and electrical properties of this oxynitride series is examined. The electrical and passivation properties of these films on Si are examined and compared with oxides. These electrical data describe the general characteristics of nitride and oxynitride on top of Si and over thin (∼300Aå) and thick (∼1000Aå) thermal oxide films.