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Fabrication and characterizations of phosphorus‐doped n‐type BaSi<sub>2</sub> epitaxial films grown by molecular beam epitaxy
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2013
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Materials EngineeringMaterials ScienceSemiconductorsElectronic DevicesEngineeringElectronic MaterialsIi-vi SemiconductorApplied PhysicsSemiconductor MaterialOptoelectronic DevicesBasi 2Thin FilmsMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorAbstract Phosphorus
Abstract Phosphorus (P)‐doped BaSi 2 films were grown by molecular beam epitaxy. P‐doped BaSi 2 showed n ‐type conductivity and the electron concentration increased up to 4×10 17 cm –3 at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately 80 meV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)