Publication | Closed Access
Suppression of stress-induced voiding in copper interconnects
40
Citations
2
References
2003
Year
Unknown Venue
Materials ScienceElectrical EngineeringElectromigration TechniqueEngineeringAdvanced Packaging (Semiconductors)Stress-induced Leakage CurrentStress-induced VoidingSurface ScienceApplied PhysicsMetallurgical InteractionBarrier MetalElectronic PackagingCu Grain SizeMicroelectronicsInterconnect (Integrated Circuits)Electrical Insulation
Studied stress-induced voiding in Cu interconnects in the temperature range below 250/spl deg/C, and found two different voiding modes. One mode occurs inside a via having wide wire above it, and can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide wire below it and can be suppressed by increasing the Cu grain size and improving the adhesion of the barrier metal with Cu.
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