Neuron-MOS multiple-valued memory technology for intelligent data processing

Abstract

This paper presents RAM technology that quantizes analog input data and stores it as multi-valued data for intelligent data processing. Moreover, data association and classification according to the degree of association can also be performed at the memory-cell level without any software manipulation. The implementation of such intelligent functions by a memory cell has been facilitated by unique circuit configurations of the neuron MOS (vMOS) transistor, a multi-functional device that simulates the action of biological neurons. These concepts are experimentally verified by test devices fabricated by a standard double-polysilicon CMOS process. Although the circuits are explained for a 4-valued system, the designs can be extended to an 8-valued (or greater) system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>