Some Electrical Properties of ZnGeP₂ Crystals

Abstract

Hall effect and thermoelectric power are measured on p -type ZnGeP 2 single crystals. The ZnGeP 2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1×10 13 cm -3 and mobility 18 cm 2 /Vsec obtained from Hall measurements differ considerably from that (1×10 16 cm -3 and 1 cm 2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes m h * =(0.5±0.1) m 0 is determined from the values of the thermoelectric power.