IEEE Electron Device Letters · 2010 · 14 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor Device MaterialsThin Film LithographyThin-film TransistorsGainGate Dielectric EngineeringGate LeakageGate Leakage CurrentGate Oxide LeakageInkjet DepositionOrganic ElectronicsShadow Masking
Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sub> CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> /2. A five-stage ring oscillator is also demonstrated.
14
A high-mobility electron-transporting polymer for printed transistors
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Natural Sciences, Materials Engineering, Materials Science +14
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