Extended Charges Modeling for Deep Submicron CMOS

Abstract

The simulation of deep submicron CMOS cir- cuits operating at high-frequency requires adequate mod- els representing the dynamic behavior of the transistors. Charges in the device are affected by carrier quantization and polydepletion in the gate. Velocity saturation is one of the short-channel effects that further affect the charges. An analytical MOS transistor (MOST) model for circuit simulation which includes the above effects is described. The charges/transcapacitances expressions show good qualitative behavior at all inversion levels from weak to moderate and strong inversion and have correct asymp- totic behavior. The model agrees well with characteristics obtained from 2D device simulation and measured on deep submicron CMOS technology.