ERef Bayreuth (University of Bayreuth) · 2015 · 12 citations · 0 references
EngineeringElectrical EngineeringCircuit TheoryPower ElectronicsSemiconductor DevicesConverter TopologiesDead-time CompensationDevice CharacterizationDevice ModelingPower DissipationSemiconductor ReliabilityDead-time ControlDead-time ModelingDead-time OptimizationPower MosfetsSilicon Carbide (Sic) MaterialsSilicon Carbide Power ElectronicsSwitching Loss ReductionTemperature Dependence Of Diodes
Operating a SiC-MOSFET in an inverter phase leg will result in using it in the reverse direction. As the parasitic pn-diode shows a non-favourable characteristic, the aim of this paper is to increase the performance by minimizing the dead-time between the opposite MOSFETs, thus trying to eliminate the bipolar diode effect. The effect on the reverse recovery and the overvoltage was investigated depending on current and temperature. A dead-time providing minimum losses could be identified.