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Integrated One Diode–One Resistor Architecture in Nanopillar SiO_<i>x</i> Resistive Switching Memory by Nanosphere Lithography

Ji Li, Yao‐Feng Chang, Burt Fowler et al. · Nano Letters · 2013 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Yao‐Feng Chang, Burt Fowler, Ying‐Chen Chen et al. · Journal of Applied Physics · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Electroforming and resistive switching in silicon dioxide resistive memory devices

Burt Fowler, Yao‐Feng Chang, Fei Zhou et al. · RSC Advances · 2015 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Yao‐Feng Chang, Burt Fowler, Ying‐Chen Chen et al. · Journal of Applied Physics · 2014 · 66 citations

Engineering, Materials Engineering, Materials Science +17

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

Yanzhen Wang, Yen‐Ting Chen, Fei Xue et al. · Applied Physics Letters · 2012 · 56 citations

Engineering, Materials Engineering, Materials Science +17