Stacking Fault Migration

Stacking Fault Migration is a materials science phenomenon that refers to the movement of stacking faults within a crystal lattice, distinguished by the displacement of atomic planes from their ideal stacking sequence due to shear stress or thermodynamic driving forces.

90

Publications

5.5K

Citations

358

Authors

146

Institutions

Publications per year

2017–2026

31

Authors

358

  1. YO
    Yu.N. Osetsky

    University of Liverpool, United Kingdom

    3 publications · 180 citations

    3

    h-index

  2. LV
    Levente Vitos

    KTH Royal Institute of Technology, Sweden

    3 publications · 271 citations

    3

    h-index

  3. RS
    R.E. Stoller

    Oak Ridge National Laboratory, United States

    3 publications · 180 citations

    3

    h-index

  4. XZ
    X. Zhang

    Purdue University West Lafayette, United States

    3 publications · 359 citations

    3

    h-index

  5. HW
    Haiyan Wang

    Purdue University West Lafayette, United States

    3 publications · 359 citations

    3

    h-index

1–5 of 358

Venues

  1. Acta Materialia

    8 publications · 583 citations

    8

    h-index

  2. Materials Science and Engineering A

    8 publications · 638 citations

    8

    h-index

  3. Scripta Materialia

    8 publications · 515 citations

    8

    h-index

  4. Acta Metallurgica

    6 publications · 394 citations

    6

    h-index

  5. Journal of Nuclear Materials

    5 publications · 227 citations

    5

    h-index

1–5