Oxidizing Annealing
Oxidizing Annealing is a thin film annealing technique in which the material is subjected to controlled thermal treatment in an oxygen-containing atmosphere to promote the formation or enhancement of oxide phases, thereby modifying its structural, electrical, or optical properties.
27
Publications
663
Citations
136
Authors
46
Institutions
Publications per year
2017–2026
5
Parents
27
1–5 of 27
136
1
h-index
1
h-index
V.E. Lashkaryov Institute of Semiconductor Physics, Ukraine
1 publications · 18 citations
1
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1
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1
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1–5 of 136
46

Centre National de la Recherche Scientifique
Paris, France
3 h-index
10 publications
184 citations
Institut des NanoSciences de Paris
Paris, France
1 h-index
1 publications
10 citations

Xi'an Jiaotong University
Xi'an, China
1 h-index
3 publications
165 citations

Oak Ridge National Laboratory
Oak Ridge, United States
1 h-index
4 publications
92 citations
National Tsing Hua University
Hsinchu, Taiwan
1 h-index
3 publications
63 citations

Beijing Institute of Technology
Beijing, China
1 h-index
7 publications
469 citations
Samsung (South Korea)
Seoul, South Korea
1 h-index
10 publications
120 citations
Mitsui (Japan)
Tokyo, Japan
1 h-index
2 publications
22 citations
1–8 of 46
3 publications · 159 citations
3
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2 publications · 53 citations
2
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2 publications · 33 citations
2
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1 publications · 11 citations
1
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1 publications · 26 citations
1
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1–5