High-side Gate Drive Circuits

High-Side Gate Drive Circuits is a gate drive circuit configuration in which the driving circuitry is referenced to a floating potential and specifically controls a power switch connected between the high-voltage rail and the load, distinguishing it from low-side configurations by enabling the regulation of switches in the upper leg of a half-bridge or full-bridge topology.

25

Publications

688

Citations

81

Authors

36

Institutions

Publications per year

2017–2026

5

Authors

81

  1. TM
    Thomas M. Jahns

    University of Wisconsin–Madison, United States

    2 publications · 109 citations

    2

    h-index

  2. BY
    Bing Yuan

    Xidian University, China

    2 publications · 61 citations

    2

    h-index

  3. JC
    Jean-Christophe Crébier

    Université Grenoble Alpes, France

    2 publications · 65 citations

    2

    h-index

  4. YJ
    Ying Jing

    Xidian University, China

    2 publications · 61 citations

    2

    h-index

  5. AQ
    Alex Q. Huang

    North Carolina State University, United States

    1 publications · 35 citations

    1

    h-index

1–5 of 81

Venues

  1. IEEE Transactions on Power Electronics

    5 publications · 233 citations

    5

    h-index

  2. IEEE Journal of Solid-State Circuits

    2 publications · 22 citations

    2

    h-index

  3. IEEE Transactions on Industry Applications

    1 publications · 80 citations

    1

    h-index

  4. 1

    h-index

  5. 1

    h-index

1–5